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Waveguide In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode |
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| Authors: | Kinsey GS Hansing CC Holmes AL Jr Streetman BG Campbell JC Dentai AG |
| Affiliation: | Microelectron. Res. Center, Texas Univ., Austin, TX; |
| Abstract: | A high-speed waveguide In0.53Ga0.47As-In0.52Al0.48 As separate absorption, charge, and multiplication avalanche photodiode suitable for operation at 1.55 μm has been demonstrated, a unity-gain bandwidth of 27 GHz was achieved with a gain-bandwidth product of 120 GHz |
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