Effect of Grain Boundary on the Wettability and Interfacial Morphology in the Molten Bi／Cu System

The wetting behavior of molten Bi on polycrystalline Cu substrate and single crystal Cu substrate was studied by the sessile drop method in the temperature range from 673 to 873K. At low temperature the wetting behaviors of molten Bi on both types of Cu substrate were similar. However, at high temperature, the equilibrium contact angle of polycrystalline Cu substrate was lower than that of single crystal Cu substrate, because the preferred dissolution of grain boundaries leads to a smaller liquid/solid interracial energy for polycrystalline Cu substrate. The formation mechanism of arrow-shaped Cu grains at the Bi/single crystal Cu interface is also discussed.

Effect of Grain Boundary on the Wettability and Interfacial Morphology in the Molten Bi/Cu System

The wetting behavior of molten Bi on polycrystalline Cu substrate and single crystal Cu substrate was studied by the sessile drop method in the temperature range from 673 to 873 K. At low temperature the wetting behaviors of molten Bi on both types of Cu substrate were similar. However, at high temperature, the equilibrium contact angle of polycrystalline Cu substrate was lower than that of single crystal Cu substrate, because the preferred dissolution of grain boundaries leads to a smaller liquid/solid interfacial energy for polycrystalline Cu substrate. The formation mechanism of arrow-shaped Cu grains at the Bi/single crystal Cu interface is also discussed.