| 掺杂浓度及退火对Ta-ZnO透明导电薄膜表面形貌的影响 |
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| 引用本文： | 陈进军,曹铃,宋学萍,孙兆奇. 掺杂浓度及退火对Ta-ZnO透明导电薄膜表面形貌的影响[J]. 功能材料, 2010, 41(4) |
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| 作者姓名： | 陈进军 曹铃 宋学萍 孙兆奇 |
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| 作者单位： | 贵州大学,电气工程学院,贵州,贵阳,550003;安徽大学,物理与材料科学学院,安徽,合肥,230039;安徽大学,物理与材料科学学院,安徽,合肥,230039;"光电信息获取与控制"教育部重点实验室,安徽,合肥,230039 |
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| 基金项目： | 国家自然科学基金资助项目(50872001,50642038);;教育部博士点专项基金资助项目(20060357003);;安徽省科技厅重点资助项目(05021028);;安徽省人才专项基金资助项目(2004Z029);;贵州省科学技术基金资助项目([2009]2117) |
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| 摘 要： | 室温下采用射频磁控溅射法在硅衬底上制备了掺Ta-ZnO透明导电薄膜,并在不同温度下退火处理。利用原子力显微镜、X射线光电子能谱仪对薄膜进行了表征分析,对于不同掺杂比例的Ta-ZnO薄膜以及退火后的Ta-ZnO薄膜的表面形貌进行了研究。当掺杂比例为5%(质量分数)时,薄膜有最大平均颗粒尺寸94.46nm和最小表面粗糙度4.48nm。随着退火温度的升高,该薄膜表面粗糙度(RMS)先增加后减小,平均颗粒尺寸在94.46～118.05nm之间。
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| 关 键 词： | Ta-ZnO薄膜 射频磁控溅射 掺杂 表面形貌 退火 |
Effect of Ta2O5 content in target and annealing temperature on morphological properties of Ta-ZnO films |
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| CHEN Jin-jun,CAO Ling,SONG Xue-ping,,SUN Zhao-qi. Effect of Ta2O5 content in target and annealing temperature on morphological properties of Ta-ZnO films[J]. Journal of Functional Materials, 2010, 41(4) |
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| Authors: | CHEN Jin-jun CAO Ling SONG Xue-ping SUN Zhao-qi |
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| Affiliation: | 1.Department of Electrical-Engineering;Guizhou University;Guiyang 550003;China;2.School of Physics and Materials Science;Anhui University;Hefei 230039;3.Key Laboratory of Opto-Electronic Information Acquisition and Manipulation;Ministry of Education;China |
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| Abstract: | Tantalum-doped zinc oxides transparent conducting films prepared by RF magnetron sputtering on silicon substrates at room temperature and annealed at different temperatures are characterized and analyzed by AFM and XPS.The morphological properties of Ta-ZnO films influenced by the Ta2O5 content and annealing temperature are studied.The maximum average grain size 94.46nm and the minimum surface roughness 4.48nm can be obtained for the Ta-ZnO film with the Ta2O5 content of 5wt%,the surface roughness of this f... |
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| Keywords: | tantalum-doped zinc oxides RF magnetron sputtering content morphological property annealing |
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