| 共振隧穿二极管(RTD)I-V特性的几个问题 |
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| 引用本文： | 张世林,郭维廉,梁惠来,侯志娟,牛萍娟,赵振波,郭辉. 共振隧穿二极管(RTD)I-V特性的几个问题[J]. 固体电子学研究与进展, 2003, 23(3): 329-333 |
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| 作者姓名： | 张世林 郭维廉 梁惠来 侯志娟 牛萍娟 赵振波 郭辉 |
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| 作者单位： | 天津大学电子信息工程学院,天津,300072 |
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| 基金项目： | 国防科技重点实验室基金资助项目 (NO.99JSO2 .4.2 JW14 0 3 ) |
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| 摘 要： | 对作者研制的 RTD进行了 I-V特性测量 ,并重点分析了 :(1 ) I-V特性的湿度效应 ;(2 )负阻区“表观正阻”现象 ;(3 )用负阻值估算开关时间。以上问题的分析对 RTD的设计和研制有一定的指导作用
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| 关 键 词： | 共振隧穿器件 负阻伏安特性 开关时间 |
| 文章编号： | 1000-3819(2003)03-329-05 |
| 修稿时间： | 2001-08-06 |
Some Problems on I-V Characteristics of Resonant Tunneling Diodes (TRD) |
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| ZHANG Shilin GUO Weilian LIANG Huilai HOU Zhijuan NIU Pingjuan ZHAO Zhenbo GUO Hui. Some Problems on I-V Characteristics of Resonant Tunneling Diodes (TRD)[J]. Research & Progress of Solid State Electronics, 2003, 23(3): 329-333 |
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| Authors: | ZHANG Shilin GUO Weilian LIANG Huilai HOU Zhijuan NIU Pingjuan ZHAO Zhenbo GUO Hui |
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| Abstract: | We have measure d the I V characteristics of the RTD own fabricated. Based on the measured results, some problems have been analysed and discussed:(1) Temperature effects on I V characteristics; (2)Apparent positive resistance phenomena in neg ative resistance region; (3)Estimation of RTD switching time by negative resista nce value. The analysis and discussion on above problems are very useful and hel pful for design and fabrication of RTD. |
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| Keywords: | resonant tunneling diodes negative resistance I V characteristics switc hing time |
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