Growth of A3N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase |
| |
Authors: | V V Mamutin |
| |
Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia |
| |
Abstract: | It is shown that InN and GaN whiskers and plate-shaped crystals can be grown by molecular-beam epitaxy (MBE), and the growth
mechanism on gallium arsenide and sapphire substrates is investigated. A comparison is made with the theory. It is proved
that the growth mechanism corresponds to the vapor-liquid-solid (VLS) mechanism, and the parameters of the crystallization
process are determined. The nanometer sizes of the crystals grown give hope that the crystals and the VLS growth method itself
can be used to obtain quantum-size objects (quantum dots and wires) by MBE in the promising system of elements A3B5-AlGaInN.
Pis’ma Zh. Tekh. Fiz. 25, 55–63 (September 26, 1999) |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|