Early electromigration effects and early resistance changes |
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| Authors: | A. Scorzoni I. De Munari M. Impronta N. Kelaidis |
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| Affiliation: | a Dipartimento di Ingegneria Elettronica e dell’Informazione, Università di Perugia, via G. Duranti 93, 06131 Perugia, Italy;b Centro Interdipartimentale di Ricerca, Materiali e Tecnologie dell’Informazione, Università di Parma, Parco Area delle Scienze 181A, 43100 Parma, Italy;c CNR — Istituto LAMEL, via P. Gobetti 101, 40129, Bologna, Italy;d NCSR Demokritos — Institute of Microelectronics, 153 10 Aghia Paraskevi Attikis, Athens, Greece |
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| Abstract: | This paper reviews different known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their effects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in Al–Cu lines of the present technology. |
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