Optimization of interface structures in crystalline silicon heterojunction solar cells |
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Authors: | Hiroyuki Fujiwara Tetsuya Kaneko Michio Kondo |
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Affiliation: | Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan |
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Abstract: | In heterojunction solar cells consisting of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si), suppression of epitaxial growth at the heterointerface is found to be crucial to achieve high solar cell efficiencies. In order to avoid the epitaxial growth, wide-gap hydrogenated amorphous silicon oxide (a-SiO:H) has been applied to the heterojunction solar cells. We have fabricated a-SiO:H/c-Si solar cells using n-type and p-type c-Si substrates and demonstrated that incorporation of the a-SiO:H i layer prevents the harmful epitaxial growth at the heterointerface completely. |
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