Solid-phase crystallization of amorphous silicon on ZnO:Al for thin-film solar cells |
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Authors: | C Becker E Conrad P Dogan F Fenske B Gorka T Hänel KY Lee B Rau F Ruske T Weber M Berginski J Hüpkes S Gall B Rech |
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Affiliation: | 1. Helmholtz-Zentrum Berlin für Materialien und Energie (formerly Hahn-Meitner-Institut Berlin), Kekuléstr. 5, D-12489 Berlin, Germany;2. Institute of Photovoltaics, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany |
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Abstract: | The suitability of ZnO:Al thin films for polycrystalline silicon (poly-Si) thin-film solar cell fabrication was investigated. The electrical and optical properties of 700 -nm-thick ZnO:Al films on glass were analyzed after typical annealing steps occurring during poly-Si film preparation. If the ZnO:Al layer is covered by a 30 nm thin silicon film, the initial sheet resistance of ZnO:Al drops from 4.2 to 2.2 Ω after 22 h annealing at 600 °C and only slightly increases for a 200 s heat treatment at 900 °C. A thin-film solar cell concept consisting of poly-Si films on ZnO:Al coated glass is introduced. First solar cell results will be presented using absorber layers either prepared by solid-phase crystallization (SPC) or by direct deposition at 600 °C. |
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