Continuous-wave operation up to 36/spl deg/C of 1.3-/spl mu/m GaInAsP-InP vertical-cavity surface-emitting lasers |
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Authors: | S Uchiyama N Yokouchi T Ninomiya |
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Affiliation: | Optoelectron. Furukawa Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan; |
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Abstract: | We introduced ion-beam assisted deposition in order to improve the quality of Al/sub 2/O/sub 3/ and SiO/sub 2/, which were used as part of the mirrors of 1.3-/spl mu/m GaInAsP-InP vertical-cavity surface-emitting lasers (VCSELs). The refractive index of Al/sub 2/O/sub 3/ was improved to 1.63 from 1.56 and the one of SiO/sub 2/ increased to 1.47 from 1.45. Low-threshold room-temperature continuous-wave (CW) operation of 1.3-/spl mu/m VCSEL with the improved mirrors was demonstrated. The threshold current was 2.4 mA at 20/spl deg/C. The CW operating temperature was raised to 36/spl deg/C, which is a record high temperature for 1.3-/spl mu/m VCSEL. |
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