基体偏压对磁控溅射制备CrAlN纳米多层薄膜微观结构和力学性能的影响

采用磁控溅射技术在不同基体偏压(-60,-70,-80,-90 V)下制备了CrAlN纳米多层薄膜,研究了基体偏压对薄膜微观结构和力学性能的影响。结果表明:随着基体偏压绝对值增大,CrAlN纳米多层薄膜中的氮含量增加,物相组成不变,择优取向由CrN(111)晶面转变为CrN(200)晶面,薄膜表面孔隙减少,组织致密性得到改善;基体偏压为-60~-80 V时,偏压对薄膜沉积速率的影响较小,偏压绝对值大于80 V时,沉积速率明显下降;随着基体偏压绝对值增大,薄膜的硬度和弹性模量提高,膜基结合力先增大后减小,在偏压为-80 V时达到最大。

Influence of Substrate Bias Voltage on Microstructure and Mechanical Properties of CrAlN Nano-mutilayer Film Prepared by Magnetron Sputtering

CrAlN nano-multilayer films were prepared by magnetron sputtering technique under different bias voltages(-60,-70,-80,-90 V)of the substrate,and the effect of bias voltage of the substrate on the microstructure and mechanical properties of the film was studied.The results show that with increasing absolute value of the substrate bias voltage,the nitrogen content in the CrAlN nano-multilayer film increased,the phase composition unchanged,the preferred orientation changed from the CrN(111)crystal plane to the CrN(200)crystal plane,the pores on the film surface decreased,and the densification of microstructure was improved.When the bias voltage of the substrate was between-60 and-80 V,the bias voltage had little effect on the film deposition rate.When absolute value of the bias voltage was higher than 80 V,the deposition rate decreased significantly.With increasing absolute value of bias voltage of the substrate,the hardness and elastic modulus of the film increased,and the film base bonding force increased and then decreased,reaching the maximum at-80 V of bias voltage.