高能电子单粒子效应模拟实验研究

本文基于2 MeV自屏蔽电子加速器和10 MeV电子直线加速器，开展了电子单粒子效应实验研究，并分析了其机理。在保持入射电子能量不变的情况下，在±20%范围内改变器件的工作电压进行了单粒子翻转实验。实验结果表明：45 nm SRAM（额定工作电压1.5 V）芯片在电子直线加速器产生的高能电子照射下能产生明显的单粒子翻转，单粒子翻转截面随入射电子能量的变化趋势与文献数据相符合；电子引起的单粒子翻转截面随器件工作电压的变化趋势与理论预期一致，即工作电压越小，单粒子翻转临界电荷越小，翻转截面也越高。

Experimental Simulation Study on Single Event Effect Induced by High Energy Electron

Based on 2 MeV self-shielding electron accelerator and 10 MeV electron linear accelerator, the electron single event effect experiment was carried out. Under the condition of the incident electron energy constant, the device operating voltage was changed within ±20% for single event upset experiment. The experiment results indicate that 45 nm SRAM (rated working voltage of 1.5 V) has significant single event upset under the high-energy electron irradiation generated by the electron linear accelerator, and the single event upset cross section changing with the incident electron energy is consistent with literature data. The change trend of electron induced single event upset cross section with the operating voltage of the device is also consistent with the theoretical expectation. The smaller the operating voltage, the lower the critical charge of the single event upset and the higher the cross section.