| 12位LC2MOS工艺数模转换器总剂量电离辐射效应 |
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| 引用本文： | 王信,陆妩,郭旗,吴雪,席善斌,邓伟,崔江维,张晋新. 12位LC2MOS工艺数模转换器总剂量电离辐射效应[J]. 原子能科学技术, 2013, 47(12): 2355-2360. DOI: 10.7538/yzk.2013.47.12.2355 |
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| 作者姓名： | 王信 陆妩 郭旗 吴雪 席善斌 邓伟 崔江维 张晋新 |
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| 作者单位： | 1.中国科学院 新疆理化技术研究所，新疆 乌鲁木齐830011；2.新疆电子信息材料与器件重点实验室，新疆 乌鲁木齐830011；3.中国科学院大学，北京100049 |
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| 摘 要： | 为了研究数模转换器在电离辐射环境中的可靠性，选取12位LC2MOS工艺的数模转换器作为研究对象，使用60Co γ射线源对其进行了不同剂量率、不同偏置条件下的总剂量电离辐射效应研究。试验结果表明，LC2MOS工艺的数模转换器对辐射剂量率非常敏感，高剂量率条件下的辐射损伤较低剂量率条件下的更为显著；不同偏置条件下，其辐射损伤程度也有很大不同，正常工作偏置下的数模转换器辐射损伤较非工作偏置的辐射损伤更为明显。
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| 关 键 词： | 电离辐射, 数模转换器, 剂量率效应, 2MOS')" >LC2MOS |
Total Ionizing Dose Effect on 12-bit LC2MOS Digital to analog Converter |
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| WANG Xin,LU Wu,GUO Qi,WU Xue,XI Shan-bin,DENG Wei,CUI Jiang-wei,ZHANG Jin-xin. Total Ionizing Dose Effect on 12-bit LC2MOS Digital to analog Converter[J]. Atomic Energy Science and Technology, 2013, 47(12): 2355-2360. DOI: 10.7538/yzk.2013.47.12.2355 |
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| Authors: | WANG Xin LU Wu GUO Qi WU Xue XI Shan-bin DENG Wei CUI Jiang-wei ZHANG Jin-xin |
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| Affiliation: | 1.Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China; 2.Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China; 3.University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | 12-bit digital-to-analog converter（DAC） in LC2MOS technology was irradiated by 60Co γ ray at high and low dose rates under two bias conditions to investigate total ionizing dose effect of the DAC. The results show that the DAC in LC2MOS technology is sensitive to dose rates, and radiation failure level is more significant at high dose rate compared to low dose rate. Under different bias conditions, the radiation failure levels are different, and the radiation damage under the operating bias condition is more severe. |
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| Keywords: | ionizing radiation digital-to-analog converter dose rate effect LC2MOS |
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