Simulation and design of junction termination structures for diamond Schottky diodes |
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| Authors: | F. Thion K. Isoird D. Planson M.-L. Locatelli H. Ding |
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| Affiliation: | 1. CNRS; LAAS; 7 avenue du colonel Roche, F-31077 Toulouse, France;2. Université de Toulouse; UPS, INSA, INP, ISAE; LAAS; F-31077 Toulouse, France;3. Université de Lyon, INSA de Lyon, CNRS UMR 5005, Laboratoire AMPERE, F-69621 Villeurbanne, France;4. Université de Toulouse; UPS, INPT; LAPLACE (Laboratoire Plasma et Conversion d''Energie); 118 route de Narbonne, F-31062 Toulouse cedex 9, France;5. CNRS; LAPLACE; F-31062 Toulouse, France |
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| Abstract: | In this paper, the first step of the design of a junction termination structure usable on diamond Schottky diodes is introduced. Through the collaboration of AMPERE and LAAS laboratories, a study of junction termination structures using field plates and semi-resistive materials was carried out. Several results from simulations of p-type Schottky diodes protected by MESA etching and coated with several layers of dielectric materials are shown in this paper. The analysis of those simulations, conducted on pseudo-vertical diodes protected by a field plate on a semi-resistive layer deposited on top of a dielectric, shows a great efficiency of such junction termination structures. |
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