Overall elastic domain of thin polysilicon films |
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| Authors: | Stefano Mariani Roberto Martini Alberto Corigliano Marco Beghi |
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| Affiliation: | 1. Politecnico di Milano, Dipartimento di Ingegneria Strutturale Piazza L. da Vinci 32, 20133 Milano, Italy;2. Politecnico di Milano, Dipartimento di Energia NEMAS-Center for NanoEngineered Materials and Surfaces Via Ponzio 34/3, 20133 Milano, Italy;1. Department of Civil & Environmental Engineering, University of Macau, Macau, China;2. Department of Structural Engineering, College of Civil Engineering, Tongji University, Shanghai 200092, China;3. School of Civil Engineering and Geosciences, Newcastle University, Newcastle upon Tyne NE1 7RU, United Kingdom;4. Department of Building & Real Estate, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China;1. Shanghai Institute of Applied Mathematics and Mechanics, Shanghai University, Shanghai, China;2. Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai University, Shanghai, China;3. Department of Mechanics, Shanghai University, Shanghai, China;1. Shanghai Institute of Applied Mathematics and Mechanics, Shanghai University, Shanghai 200072, China;2. Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai University, Shanghai 200072, China;3. Department of Mechanics, Shanghai University, Shanghai 200444, China;1. Department of Mechanical Engineering, Zhangjiajie Institute of Aeronautical Engineering, Zhangjiajie 427000, PR China;2. State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha 410082, PR China;3. State Key Laboratory for Powder Metallurgy, Central South University, Changsha 410083, PR China;4. School of Engineering and Material Sciences, Queen Mary, University of London, London E1 4NS, UK |
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| Abstract: | We present a numerical study aimed to define the overall elastic domain of thin polysilicon films subjected to in-plane loadings. Homogenized properties are obtained for digital polycrystalline microstructures, generated in a representative volume element (RVE) through Voronoi tessellations. To locate the elastic limit, three micromechanical sources of dissipation are allowed for: (i) trans-granular cracking, as due to tensile stresses attaining the local strength inside silicon grains; (ii) inter-granular failure, as due to coupled normal-shear tractions attaining a local effective strength along grain boundaries; (iii) trans-granular phase transformation, as due to compressive stresses attaining a critical threshold inside silicon grains.Results of the homogenization procedure show that Rankine-type overall domains are too crude approximations to the polysilicon elastic envelope, since corners arise because of switching among the three dissipative modes allowed for. Outcomes of the analysis allow also to estimate the size of the RVE required to get objective overall polysilicon properties: according to data already available in the literature, it is shown that the RVE has to gather at least a few hundreds of grains. |
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