| 一种新型低阻SOI P-LDMOS研究 |
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| 引用本文： | 孙智林,孙伟锋,易扬波,吴建辉. 一种新型低阻SOI P-LDMOS研究[J]. 功能材料与器件学报, 2004, 10(1): 67-70 |
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| 作者姓名： | 孙智林 孙伟锋 易扬波 吴建辉 |
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| 作者单位： | 东南大学,国家专用集成电路系统工程研究中心,南京,210096;东南大学,国家专用集成电路系统工程研究中心,南京,210096;东南大学,国家专用集成电路系统工程研究中心,南京,210096;东南大学,国家专用集成电路系统工程研究中心,南京,210096 |
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| 基金项目： | 国家高技术研究发展计划(863计划)资助项目(2002AA1Z1550) |
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| 摘 要： | 提出了一种新型SOI P-LDMOS器件,其大部分漂移区不覆盖场氧,从而避免了因生长场氧的高温过程而引起的硼杂质分凝效应,并在制备场氧、栅氧之后进行漂移区表面注入,由于注入后没有长时间的高温过程,进一步提高了漂移区表面的掺杂浓度.模拟结果表明新型P-LDMOS性能得到明显改善,与传统P-LDMOS相比开态导通电阻降低了24.7%,击穿电压提高了17.3%,饱和电流提高了26.7%.
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| 关 键 词： | LDMOS 导通电阻 表面注入 SOI |
| 文章编号： | 1007-4252(2004)01-0067-04 |
| 修稿时间： | 2003-05-15 |
Research on a novel SOI P-LDMOS transistor with low on-resistance |
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| SUN Zhi -lin,SUN Wei -feng,YI Yang -b o,WU Jian -hui. Research on a novel SOI P-LDMOS transistor with low on-resistance[J]. Journal of Functional Materials and Devices, 2004, 10(1): 67-70 |
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| Authors: | SUN Zhi -lin SUN Wei -feng YI Yang -b o WU Jian -hui |
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| Abstract: | A novel SOI P -LDMOS with field oxide partly on the surface of the drift is p roposed.The lack of the field oxide avoids defleg mating the impurity of the drift surface in the high temperature process.The surface is implanted after the preparation of field oxide an d gate oxide.Since there is no subsequent long -time high -tempera ture process,the impurity concentr ation of the surface of the drift is improved.Thus the on -resistance of the device decreases.The simulation results manifest that the on -resistance of the proposed P -LDM OS is reduced by 24.7%,the breakdown voltage is improved by 17.3%and the saturated current is increased by 26.7%,comparing to the conventional P -LDMOS. |
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| Keywords: | LDMOS on -resistance surface imp lantation SOI |
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