Optimal design of Pb1-xSnxTe double heterostructure injection lasers

Results of optimization calculations are presented for broad area double heterostructure PbSnTe lasers. It was found that by adequately choosing the parameters of lasers, the threshold current densities can be substantially lowered. In particular, threshold current densities of 30 A/cm²at 77 K and of 2 kA/cm²at 200 K are predicted for devices which emit a wavelength of 10.6 μm at 77 K.