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Proportional BIC sensor for current testing
Authors:Josep Rius  J. Figueras
Affiliation:(1) Departament d'Enginyeria Electrònica, Universität Politècnica de Catalunya, Avda. Diagonal 647, 08028 Barcelona, Spain
Abstract:A new design of a BIC sensor for current testing static CMOS circuits is proposed. It is based on a lateral BJT device which is easy to incorporate in any standard CMOS process. The design diverts a fraction of the IDDQ current from the cell under test and a resistive component generates a voltage proportional to IDDQ. Additional features are the possibility of continuous measure of idd and increased speed of this sensor compared with sensors based on the current integration principle. The design does not have substrate currents due to the parasitic vertical BJTs. Experimental work on the sensor is reported.
Keywords:Built-in integrated sensor  CMOS lateral BJT  current test  gate controlled BJT  IDDQ measure
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