| 大通量辐照的NTD CZ Si 高温退火行为 |
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| 引用本文： | 张维连. 大通量辐照的NTD CZ Si 高温退火行为[J]. 电子与信息学报, 1988, 10(5): 474-480. |
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| 作者姓名： | 张维连 |
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| 作者单位： | 河北工学院 天津 |
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| 摘 要： | 本文研究了大通量辐照(1018n/cm2)的NTD CZ在750-1200℃范围内退火的行为。发现在该温度区间内会产生高浓度的中照施主,最高可达到1016cm-3。只有在高于1100℃退火才能获得准确的目标电阻率.探讨了大通量辐照NTD CZ Si的退火工艺,中照施主的形成及其消除条件。
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| 关 键 词： | 中子嬗变掺杂直拉硅 中照施主 退火 目标电阻率 |
| 收稿时间： | 1986-09-07 |
| 修稿时间： | 1987-09-07 |
HGIH-TEMPERATURE ANNEALING BEHAVIOUR OF NTD CZ Si IRRADIATED BY HIGH NEUTRON FLUENCE |
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| Zhang Weilian. HGIH-TEMPERATURE ANNEALING BEHAVIOUR OF NTD CZ Si IRRADIATED BY HIGH NEUTRON FLUENCE[J]. Journal of Electronics & Information Technology, 1988, 10(5): 474-480. |
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| Authors: | Zhang Weilian |
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| Affiliation: | Hebei Institute of Technology Tianjin |
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| Abstract: | High temperature (750-1900C) annealing behaviour of NTD CZ Si irradiated by high neutron fluence (1018 n/cm) is investigated. It is found that neutron irradiation induced donor (NIID) with high concentration can be produced within the temperature range, die highest concentration of the donors can arrive in value about 10" cm-2. Only if annealing temperature exceeds 1100C, the accurate aim rwistivity can be obtained. The annealing technology for the NTD CZ Si and the condition of appearance and annihilation for NIID are studied. |
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| Keywords: | NTD CZ Si Neutron irradiation induced donor Annealing Aim resistivity. |
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