Deposition and gas sensing properties of tin oxide thin films by inductively coupled plasma chemical vapor deposition |
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Authors: | Y. C. Lee O. K. Tan H. Huang M. S. Tse |
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Affiliation: | (1) Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore |
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Abstract: | Tin oxide thin films have been deposited by a custom-designed inductively coupled plasma chemical vapor deposition (ICP-CVD) system in order to explore its application as an alternative approach for thin film gas sensor preparation. The as-deposited SnO2 films were of polycrystalline structure with nano-size grains of 12 nm. The SnO2 films exhibited a maximum sensitivity of 43 to 1000 ppm H2 at an optimum operating temperature of 350∘C. The response time of the SnO2 films was 12 s and full recovery was achievable. |
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Keywords: | Tin oxide Gas sensing Chemical vapor deposition |
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