Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures |
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| Authors: | Luchinin V V Panov M F |
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| Affiliation: | (1) St. Petersburg University of Electrical Engineering, St. Petersburg, Russia |
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| Abstract: | An ellipsometric method to determine the thickness of the transition layer in SiC/SiO2 structures is presented. It consists in solving the inverse problem of ellipsometry with as few as one or two unknowns. A technique to identify the polarity of (0001) SiC faces from  and  is proposed. |
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