MHEMT with a power-gain cut-off frequency of f
max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure |
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Authors: | D V Lavrukhin A E Yachmenev R R Galiev R A Khabibullin D S Ponomarev Yu V Fedorov P P Maltsev |
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Affiliation: | 1. Institute of Ultrahigh-Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia
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Abstract: | The method of molecular-beam epitaxy is used to grow a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As nanoheterostructure with a step-graded metamorphic buffer on a GaAs substrate. The root-mean-square value of the surface roughness is 3.1 nm. A MHEMT (metamorphic high-electron-mobility transistor) with a zigzag-like gate of a length of 46 nm is fabricated on the basis of this nanoheterostructure; for this MHEMT, the cutoff frequencies for the current and power gain are f T = 0.13 THz and f max = 0.63 THz, respectively. |
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