Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations |
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Authors: | C Nguyen B Brar C R Bolognesi J J Pekarik H Kroemer J H English |
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Affiliation: | (1) Department of Electrical and Computer Engineering, University of California, 93106 Santa Barbara, CA |
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Abstract: | Low-temperature mobilities in InAs-AlSb quantum wells depend sensitively on the buffer layer structures. Reflection high energy
electron diffraction and x-ray diffraction show that the highest crystalline quality and best InAs transport properties are
obtained by a buffer layer sequence GaAs → AlAs → AlSb → GaSb, with a final GaSb layer thickness of at least 1 μm. Using the
improved buffer scheme, mobilities exceeding 600,000 cm2/Vs at 10 K are routinely obtained. Modulation δ-doping with tellurium has yielded electron sheet concentrations up to 8 ×
1012 cm−2 while maintaining mobilities approaching 100,000 cm2/Vs at low temperatures. |
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Keywords: | InAs-AlSb quantum wells interface roughness reflection high energy electronic diffraction (RHEED) tellurium doping |
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