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Ge_xSi_(1-x)/Si红外探测器量子效率的理论计算
引用本文:李国正,张浩. Ge_xSi_(1-x)/Si红外探测器量子效率的理论计算[J]. 半导体光电, 1995, 0(4)
作者姓名:李国正  张浩
作者单位:西安交通大学电子工程系
摘    要:通过对GexSi(1-x)/Si红外探测器结构及机理的研究,建立了计算量子效率的模型,并计算了内量子效率与波长的关系,与他人的实验结果符合得很好。

关 键 词:半导体器件,光电器件,红外探测器,量子效率

Theoretical calculation of internal quantum efficiency of Ge_xSi_(1-x)/Si IR detectors
LI Guozheng,ZHANG Hao. Theoretical calculation of internal quantum efficiency of Ge_xSi_(1-x)/Si IR detectors[J]. Semiconductor Optoelectronics, 1995, 0(4)
Authors:LI Guozheng  ZHANG Hao
Abstract:A model to calculate internal quantum efficiency of long wavelength GexSi(1-x)/Si infrared detector is established based on the study of its structure and mechanism. The dependence of internal quantum efficiency on wavelength is given.It well agrees with the experimental results that have been reported by others.
Keywords:Semiconductor Devices  Optoelectronic Devices  Infrared Detectors  Quantum Efficiency  
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