Formation and characterization of self-organized CdSe quantum dots |
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Authors: | Kenzo Maehashi Nobuhiro Yasui Yasuhiro Murase Takeshi Ota Tsuguki Noma Hisao Nakashima |
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Affiliation: | (1) The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, 567-0047 Ibaraki, Osaka, Japan |
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Abstract: | We have investigated the formation and characteristic of self-organized CdSe quantum dots (QDs) on ZnSe(001) surfaces with
the use of photoluminescence (PL) and transmission electron microscopy (TEM). Coherent CdSe QDs are naturally formed on ZnSe
surfaces, when the thickness of CdSe layers is around 2 ML. The plan-view TEM images exhibit that CdSe QDs have a relatively
narrow distribution of QD size, and that the density of CdSe QDs is about 1010 cm−2. The base structure of the CdSe dot is rhombic, which has the long axis of about 20 nm in length along
direction. The temperature dependence of macro-PL spectra reveals that the behavior of self-organized CdSe QDs is quite different
from that of ZnCdSe quantum well (QW), resulting from characteristic features of zero-dimensional structures of QDs. Moreover,
the macro-PL results suggest the existence of QW-like continuous state lying over QD states. Micro-PL measurements show several
numbers of high-resolved sharp lines from individual CdSe QDs. The linewidth broadening with temperature depends on peak energy
position of the QDs. The linewidths of lower energy lines, corresponding to larger size QDs, are more temperature dependent. |
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Keywords: | Self-organized CdSe quantum dots photoluminescence transmission electron microscopy molecular beam epitaxy |
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