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Formation and characterization of self-organized CdSe quantum dots
Authors:Kenzo Maehashi  Nobuhiro Yasui  Yasuhiro Murase  Takeshi Ota  Tsuguki Noma  Hisao Nakashima
Affiliation:(1) The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, 567-0047 Ibaraki, Osaka, Japan
Abstract:We have investigated the formation and characteristic of self-organized CdSe quantum dots (QDs) on ZnSe(001) surfaces with the use of photoluminescence (PL) and transmission electron microscopy (TEM). Coherent CdSe QDs are naturally formed on ZnSe surfaces, when the thickness of CdSe layers is around 2 ML. The plan-view TEM images exhibit that CdSe QDs have a relatively narrow distribution of QD size, and that the density of CdSe QDs is about 1010 cm−2. The base structure of the CdSe dot is rhombic, which has the long axis of about 20 nm in length along 
$$1\bar 10]$$
direction. The temperature dependence of macro-PL spectra reveals that the behavior of self-organized CdSe QDs is quite different from that of ZnCdSe quantum well (QW), resulting from characteristic features of zero-dimensional structures of QDs. Moreover, the macro-PL results suggest the existence of QW-like continuous state lying over QD states. Micro-PL measurements show several numbers of high-resolved sharp lines from individual CdSe QDs. The linewidth broadening with temperature depends on peak energy position of the QDs. The linewidths of lower energy lines, corresponding to larger size QDs, are more temperature dependent.
Keywords:Self-organized CdSe quantum dots  photoluminescence  transmission electron microscopy  molecular beam epitaxy
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