| 非穿通型与穿通型平行平面结基于Chynoweth方法的新的设计表达式 |
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| 引用本文： | 黄海猛,陈星弼.非穿通型与穿通型平行平面结基于Chynoweth方法的新的设计表达式[J].半导体学报,2013,34(7):074003-5. |
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| 作者姓名： | 黄海猛 陈星弼 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China |
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| 基金项目： | 高等学校博士学科点专项科研基金；国家自然科学基金； |
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| 摘 要： | The relations among the breakdown voltage,the width and the concentration of the voltage-sustaining layer for the non-punch-through(NPT) and punch-through(PT) abrupt parallel-plane junctions have been reestablished based on the ionization integral by the Chynoweth model,distinguished from the conventional results obtained by the Fulop model.The numerical calculation results indicate that the new expressions are more accurate than those in previous literature.While the breakdown voltage of the NPT case varied from 400 to 1600 V using the Chynoweth model,the value using the Fulop model is overestimated by 12%(478 V) to 18%(1895 V).For the PT case with optimum design of the specific on-resistance,when the breakdown voltage is varied from 400 to 1600 V,the width and concentration are from 81.0168%to 80.2416%and from 91.4341%to 91.6941%of those of the NPT cases,respectively.The relations between the specific on-resistance and the breakdown voltage for both the NPT and PT structures are also established.Simulation results by MEDICI show good agreement with the proposed expressions.
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| 关 键 词： | abrupt parallel-plane junction impact ionization integral Chynoweth law Fulop law |
New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on Chynoweth law |
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| Huang Haimeng and Chen Xingbi.New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on Chynoweth law[J].Chinese Journal of Semiconductors,2013,34(7):074003-5. |
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| Authors: | Huang Haimeng and Chen Xingbi |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | The relations among the breakdown voltage, the width and the concentration of the voltage-sustaining layer for the non-punch-through (NPT) and punch-through (PT) abrupt parallel-plane junctions have been re-established based on the ionization integral by the Chynoweth model, distinguished from the conventional results obtained by the Fulop model. The numerical calculation results indicate that the new expressions are more accurate than those in previous literature. While the breakdown voltage of the NPT case varied from 400 to 1600 V using the Chynoweth model, the value using the Fulop model is overestimated by 12% (478 V) to 18% (1895 V). For the PT case with optimum design of the specific on-resistance, when the breakdown voltage is varied from 400 to 1600 V, the width and concentration are from 81.0168% to 80.2416% and from 91.4341% to 91.6941% of those of the NPT cases, respectively. The relations between the specific on-resistance and the breakdown voltage for both the NPT and PT structures are also established. Simulation results by MEDICI show good agreement with the proposed expressions. |
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| Keywords: | abrupt parallel-plane junction impact ionization integral Chynoweth law Fulop law |
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