| 通过Al掺杂调节TiN金属栅功函数 |
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| 引用本文： | 韩锴,马雪丽,杨红,王文武. 通过Al掺杂调节TiN金属栅功函数[J]. 半导体学报, 2013, 34(7): 076003-4 |
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| 作者姓名： | 韩锴 马雪丽 杨红 王文武 |
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| 作者单位： | Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences |
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| 基金项目： | Project supported by the Important National Science & Technology Specific Projects of China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001) |
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| 摘 要： | The effect of Al incorporation on the effective work function(EWF) of TiN metal gate was systematically investigated.Metal-oxide-semiconductor(MOS) capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose.Different thickness ratios of Al to TiN and different post metal annealing(PMA) conditions were employed.Significant shift of work function towards to Si conduction band was observed,which was suitable for NMOS and the magnitude of shift depends on the processing conditions.
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| 关 键 词： | work function modulation Al MOS capacitor PMA |
Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation |
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| Han Kai,Ma Xueli,Yang Hong and Wang Wenwu. Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation[J]. Chinese Journal of Semiconductors, 2013, 34(7): 076003-4 |
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| Authors: | Han Kai Ma Xueli Yang Hong Wang Wenwu |
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| Affiliation: | Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | The effect of Al incorporation on the effective work function (EWF) of TiN metal gate was systematically investigated. Metal-oxide-semiconductor (MOS) capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose. Different thickness ratios of Al to TiN and different post metal annealing (PMA) conditions were employed.Significant shift of work function towards to Si conduction band was observed, which was suitable for NMOS and the magnitude of shift depends on the processing conditions. |
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| Keywords: | work function modulation Al MOS capacitor PMA |
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