Charge State of Indium and Point Defects in Indium-Doped Lead Telluride Crystals |
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| Authors: | D M Freik V M Boichuk L I Mezhilovskaya |
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| Affiliation: | (1) Physicochemical Institute, Stefanik University, Galitskaya ul. 201, Ivano-Frankovsk, 76000, Ukraine |
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| Abstract: | Experimental data on the lattice parameter, thermoelectric power, and microhardness of PbTe In crystals and the conversion fromp- to n-type with increasing indium content can be interpreted under the assumption that the indium in PbTeIn has variable valence: 2In2+  In+ + In3+. A crystal-quasi-chemical model is proposed for defect formation in PbTeIn: the incorporation of In+ into octahedral interstices and In3+ into tetrahedral interstices of the close packing of Te atoms, accompanied by In2Te3 precipitation. |
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