| 薄型双漂移区高压器件新结构的耐压分析 |
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| 引用本文： | 李琦,王卫东,赵秋明,晋良念.薄型双漂移区高压器件新结构的耐压分析[J].微电子学与计算机,2012,29(2):129-132,137. |
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| 作者姓名： | 李琦 王卫东 赵秋明 晋良念 |
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| 作者单位： | 桂林电子科技大学信息与通信学院,广西桂林,541004 |
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| 基金项目： | 广西自然科学基金，广西千亿元产业重大科技攻关工程项目 |
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| 摘 要： | 提出与CMOS工艺兼容的薄型双漂移区(TD)高压器件新结构.通过表面注入掺杂浓度较高的N-薄层,形成不同电阻率的双漂移区结构,改变漂移区电流线分布,降低导通电阻;沟道区下方采用P离子注入埋层来减小沟道区等位线曲率,在表面引入新的电场峰,改善横向表面电场分布,提高器件击穿电压.结果表明:TD LDMOS较常规结构击穿电压提高16%,导通电阻下降31%.
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| 关 键 词： | 薄型双漂移区 调制 击穿电压 导通电阻 |
Breakdown Voltage Analysis of High Voltage Device With Thin Double Drift Region |
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| LI Qi,WANG Wei-dong,ZHAO Qiu-ming,JIN Liang-nian.Breakdown Voltage Analysis of High Voltage Device With Thin Double Drift Region[J].Microelectronics & Computer,2012,29(2):129-132,137. |
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| Authors: | LI Qi WANG Wei-dong ZHAO Qiu-ming JIN Liang-nian |
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| Affiliation: | (School of Information and Communication Engineering,Guilin University of Electronic Technology,Guilin 541004,China) |
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| Abstract: | A novel high voltage device with thin double drift region(TD) is proposed,which is compatible with CMOS technology.The double drift region with different resistivity is formed through implanting N-layer of high doping concentration on the surface of the device.The on-resistance is lowered due to the change of current line distribution,and the curvature effect in the channel and distribution of the surface electric field are improved by P buried layer under the channel,which results in higher breakdown voltage.The results indicate that the breakdown voltage of TD device is increased by 16% and on-resistance decreased by 31% in comparison to conventional LDMOS. |
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| Keywords: | thin double drift region modulation breakdown voltage on-resistance |
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