部分耗尽SOI工艺器件辐射效应的研究

对0.13μm部分耗尽SOI工艺的抗辐射特性进行了研究.首先通过三维仿真研究了单粒子事件中的器件敏感区域,随后通过实验分析了器件的总剂量效应.三维仿真研究了离子入射位置不同时SOI NMOS器件的寄生双极效应和电荷收集现象,结果表明,离子入射在晶体管的体区和漏区时,均可以引起较大水平的电荷收集.对SRAM单元的单粒子翻转效应(SEU)进行了仿真,结果表明,体区和反偏的漏区都是翻转的敏感区域.通过辐照实验分析了器件的总剂量效应,在该工艺下对于隐埋氧化层,关断状态是比传输门状态更劣的辐射偏置条件.

Research on the Radiation Effect of the Partially Depleted SOI Device

The characteristic of the radiation effect of the 0.13 μm partially depleted SOI technology is researched in this paper.First,the sensitive area of the device in single event upset is studied through 3D simulation,and then the devices′ total ionizing dose(TID) effect is analyzed by experiments.The 3D simulation explored the parasitic bipolar effect and the charge collection of the SOI NMOS devices in case of different strike locations,and showed that both the strikes at the body and drain area could cause relatively great charge collection.The simulation on the SEU of SRAM cell also showed that both the body and reverse-biased drain are sensitive areas to SEU.The result of the TID experiments showed that,the OFF bias state is worse than the TG state for the buried oxide in the device of this technology.