纳米结构TiN薄膜的制备及其摩擦学性能

在室温条件下,用磁过滤等离子体装置在单晶硅基底上制备了纳米结构TiN薄膜分析了薄膜的表面形貌、晶体结构,测量了TiN薄膜的硬度,研究了基底偏压对薄膜结构性能的影响.结果表明,用此方法制备的TiN薄膜表面平整光滑,颗粒尺寸为50～80 nm;随着基底偏压的增大薄膜发生(111)面的择优取向随着偏压的提高,薄膜的颗粒度稍有增大,摩擦系数增大,偏压提高,晶面在较密排的(111)面有强烈的择优取向,硬度也有所增大.在其它条件相同的情况下载荷越大,摩擦系数越大.不起用磁过滤等离子体法制备的纳米结构TiN薄膜具有较低的摩擦系数(0.14～0.25).

Preparation and tribological behaviour of nanostructure TiN films

Nano-structure TiN thin films were deposited on silicon substrate at room temperature using filtered cathodic arc plasma (FCAP) system. The effects of negative substrate bias on the structure and property were studied. The microstructure and morphology of TiN thin films were characterized by AFM and XRD. The results show that the TiN thin films deposited by FCAP are very smooth and dense, and the grain size of the TiN ranges from 50-80 nm that increases with increasing the negative voltage. The preferred crystalline orientation was on the denser (111) orientation, and the friction coefficients of this kind of TiN films were lower than that of conventional TiN films. SEM photographs of wear trace indicated that the films were dense and macroparticle-free.