栅氧化方式对N沟输入CMOS运算放大器电离辐射效应的影响

介绍了干氧和氢氧合成两种不同栅氧化方式下制作的 N沟输入 CMOS运算放大器电路的电离辐照响应特征 .并通过对电路内部单管特性损伤分析的比较 ,探讨了引起两者辐照敏感性差异的原因 .结果显示 ,氢氧合成工艺比干氧工艺损伤明显的原因 ,是因为 H的引入产生了更多的界面态 ,从而使其单管的跨导明显下降所致 .这表明 ,抑制辐照感生氧化物电荷尤其是界面态的增长 ,对提高电路的抗辐射特性至关重要 .

Influence of Gate Oxide Growing Way on Radiation Effects of CMOS Op-Ampl

The total dose effects of two types of CMOS op-amps whose transistor gates are produced with dry O_2 and H_2+O_2 process,respectively,have been investigated.Comparing the radiation effects between the two circuits and their inner transistors,the causes of the difference between the two amplifiers' sensitivity to the irradiation is explored.It is shown that owing to the introduction of H in the process of gate oxide growing,more interface states are introduced in the irradiation,as makes the transconductance of H_2+O_2 device have much more degradation in the irradiation than the dry O_2 device.A conclusion is drawn that more attention should be paid to the way of gate oxide growing,which is one of the key factors influencing the performance of op-amplifiers in the total dose radiation environment.