Polycrystalline fluorine-doped tin oxide as sensoring thin film in EGFET pH sensor |
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Authors: | Pablo Diniz Batista Marcelo Mulato |
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Affiliation: | 1.Centro Brasileiro de Pesquisas Físicas (CBPF),Rio de Janeiro,Brazil;2.Departamento de Física e Matemática,FFCLRP-USP,Ribeirao Preto,Brazil |
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Abstract: | The Extended Gate Field Effect Transistor (EGFET) is a device composed of a conventional ion-sensitive electrode and a MOSFET
device, which can be applied for the measurement of ion content in a solution. The EGFET is fabricated connecting the sensitive
membrane to a commercial MOSFET. We investigated the use of fluorine-doped tin oxide films (FTO) as sensitive membrane to
EGFET. The commercial FTO shows a low resistivity and a crystalline structure, both determined using conductivity set-up and
X-ray diffraction experiments, respectively. So far, it has been known that an amorphous structure is desirable to obtain
high sensitivity. Despite of the a crystalline structure, we have fabricated the FTO as EGFET for pH sensor and carried out
experiments in order to obtain the response of the device inserted into solutions with pH values from 2 up to 12. In this
range, we have quantified a sensitivity of 50 mV/pH, which may have large potential applications as pH and biosensors. In
addition, both the film and the structure of the sensor are cheaper and easier to make than in common techniques. |
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