Influence of metal sheet resistivity on the IV-characteristics of metal-semiconductor diodes

Thin metal films used as Schottky contacts to semiconductors are sometimes connected in one spot only. The change of the forward IV-characteristics then caused by the finite sheet conductivity of the metal film is considered, using a model which is solved by computer techniques. The results are plotted as the deviations from the usual ln I_fvvs V_fv linear plots, for different ratios of the radii R and r₀ of the C circular metal contact and the connecting wire, and with the sheet resistivity of the metal film as a parameter. The calculations are performed for the barrier height φ_Bn = 0.79 eV. The effective series resistance of the contact wire-sheet-platelet system varies with current, but is of the order of the sheet resistivity of the film, for R/r₀ ratios region of ～20–100.