Flicker noise in MOSFETs with gate-voltage-dependent mobility

Flicker noise measurements in MOSFETs at low drain bias are explained in terms of the dependence of the carrier mobility on the gate voltage of the form μ₀₀[1 + β(V_G ? V_T ? V₀)]^?1. Excellent agreement, both for the (I_d, V_g) characteristic and for the flicker noise, is obtained. The noise current spectrum is expressed in the normalized functions f(y₀, y₁) and f(y₀, y₁)/y₀ in terms of the bias parameters y₀ = β(V_g ? V_T) and y₁ = β(V_g ? V_T ? V_d).