Amorphous metal-semiconductor contacts for high temperature electronics—II Thermal stability of Schottky barrier characteristics

We report results on the thermal stability of the Schottky barrier formed by each of two amorphous metal alloys (from the NiNb and TaIr systems) on Si and GaAs. We have found the barrier height to be stable to within 0.05 eV after treatment for 2.5 hr at 500°C in the case of TaIr/n/n⁺ GaAs, and within 0.06 eV after treatment for 40 hr at 350°C in the case of TaIr/n/n⁺ Si.