Anomalous light sensitivity of organometallic VPE AlxGa1−xAs |
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| Authors: | S. Subramanian P.K. Bhattacharya M.J. Ludowise |
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| Affiliation: | Department of Electrical and Computer Engineering, Oregon State University, Corvallis, OR 97331, U.S.A.;Corporate Solid State Laboratories, Varian Associates, Palo Alto, CA 94303, U.S.A. |
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| Abstract: | The capacitance of Al0.3Ga0.7As p-n junctions grown by organometallic vapor phase epitaxy at 690°C with V/III flux ratio of ～20 is found to be extremely light-sensitive. The light sensitivity is shown to be caused by the presence of two dominant hole traps having energy levels at 0.87 and 0.74 eV above the valence band. The traps were studied by three different schemes of DLTS measurements. The traps could be annealed out by post-growth annealing at 650°C for 1 hr in a hydrogen atmosphere. |
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