The metal-insulator-semiconductor-switch (MISS) device using thermal nitride film as the tunneling insulator

Silicon thermal nitride films grown by using direct thermal nitridation of silicon have been used as a tunneling insulator in the metal-insulator-semiconductor-switch (MISS) device. This paper has shown that better uniformity and controllability of the MISS characteristics can be easily obtained by using thermal nitride film as a tunneling insulator when compared to those using conventional thermal oxide film. The superior merits of using silicon thermal nitride film are mainly due to the fact that direct thermal nitridation of silicon in ammonia gas exhibits much lower growth rate and unique self-limiting growth. Moreover, the higher structure density of the as-grown thermal nitride film may provide higher endurance for the MISS device in integrated-circuit applications. In addition, the MISS devices operated at lower voltage (< 5 V) have been fabricated and their characteristics are discussed.