| NBTI效应导致SET脉冲在产生与传播过程中的展宽 |
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| 引用本文： | 陈建军,陈书明,梁斌,刘征,刘必慰,秦军瑞.NBTI效应导致SET脉冲在产生与传播过程中的展宽[J].电子学报,2011,39(5):996-1001. |
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| 作者姓名： | 陈建军 陈书明 梁斌 刘征 刘必慰 秦军瑞 |
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| 作者单位： | 国防科技大学计算机学院,湖南长沙 410073 |
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| 基金项目： | 国家自然科学基金重点项目，国家自然科学基金项目 |
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| 摘 要： | 本文研究了负偏置温度不稳定性(NBTI)对单粒子瞬态(SET)脉冲产生与传播过程的影响.研究结果表明:NBTI能够导致SET脉冲在产生与传播的过程中随时间而不断展宽.本文还基于工艺计算机辅助设计模拟软件(TCAD)进行器件模拟,提出了一种在130nm体硅工艺下,计算SET脉冲宽度的解析模型,并结合NBTI阈值电压退化的...
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| 关 键 词： | 负偏置温度不稳定性(NBTI) 单粒子瞬态(SET) 脉冲 脉冲展宽 解析模型 |
| 收稿时间： | 2010-05-24 |
NBT Induced SET Pulse Broadening in the Production and Propagation |
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| CHEN Jian-jun,CHEN Shu-ming,LIANG Bin,LIU Zheng,LIU Bi-wei,QIN Jun-rui.NBT Induced SET Pulse Broadening in the Production and Propagation[J].Acta Electronica Sinica,2011,39(5):996-1001. |
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| Authors: | CHEN Jian-jun CHEN Shu-ming LIANG Bin LIU Zheng LIU Bi-wei QIN Jun-rui |
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| Affiliation: | School of Computer Science,National University of Defense Technology,Changsha,Hunan 410073,China |
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| Abstract: | The effects of negative bias temperature instability (NBTI) on single event transient (SET) pulse are studied.The results show that:NBTI can result in SET pulse broadening in the production and propagation.An analytical model is developed to calculate SET pulse width in a 130nm CMOS process based on TCAD device simulations,combining with a reaction-diffusion (R-D) based NBTI degradation model,a novel analytical model to predict SET pulse broadening induced by NBTI is proposed,the results from TCAD simulations are in agreement with the ones predicted by this model;An analytical model to predict SET pulse broadening in the propagation is also proposed,SPICE simulations show consistent results with the ones predicted by the model. |
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| Keywords: | negative bias temperature instability (NBTI) single event transient (SET) pulse pulse broadening analytical model |
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