Physical modeling of hole mobility in silicon inversion layers under uniaxial stress

A physical model for hole mobility under either biaxial or uniaxial stress has been developed. The six-band k ? p theory is used to obtain the bandstructure through stress-dependent Hamiltonian. The hole mobility in the silicon inversion layer is studied in details using Monte Carlo method. A numerically robust method has been applied to achieve self-consistent solution of Poisson’s and Schrödinger equations.