| 大束流离子注入机能量污染的研究 |
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| 引用本文： | 陈林,刘晓芝.大束流离子注入机能量污染的研究[J].微纳电子技术,1998(4). |
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| 作者姓名： | 陈林 刘晓芝 |
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| 作者单位： | 电子部第四十八研究所(陈林)，长沙大学物理系(刘晓芝) |
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| 摘 要： | 能够精确控制离子注入的能量从而控制掺杂的深度是离子注入机的重要特征。本文讨论了大束流离子注入机能量污染，产生的原因及降低能量污染的方法。
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| 关 键 词： | 大束流离子注入机 能量污染 |
A Study of the Energy Contamination of Large Beam Ion Implanter |
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| Chen Lin.A Study of the Energy Contamination of Large Beam Ion Implanter[J].Micronanoelectronic Technology,1998(4). |
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| Authors: | Chen Lin |
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| Abstract: | The ability of controlling doping depth by monitoring ion beam energy accurately is an advantage of ion implanter over other doping equipment.In this paper the energy contamination and the reason of its generation are discussed.The methods of redu cing energy contamination are also discussed. |
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| Keywords: | Large beam ion implanter Energy contamination |
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