High-temperature electron mobilities in LPE-Grown GaP

We report measurements to 500°C of resistivity and Hall mobility in Sn-doped, n-type GaP grown by liquid phase epitaxy. Samples with room-temperature carrier densities between 1 × 10¹⁶ and 1 × 10¹⁸cm⁻³ were studied. Mobilities were in the range 100–180 cm²/V-sec at room temperature and in the range 27–35 cm²/V-sec at 400°C. Carrier densities increased by only about a factor of two with increasing temperature. Theoretical fits to the mobility data were made by considering contributions from intervalley, polar-optic, acoustic-deformation-potential, and ionlzed-impurity scattering mechanisms. Our results confirm the utility of GaP for high-temperature device applications and provide important information on electrical parameters needed for device modeling and design.