Influence of deposition regime on physical properties of gallium doped zinc oxide films

Zinc oxide films doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga₂O₃ target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder - horizontal, and at 60 and 80° to the horizontal position. Two series of samples 700-1000 nm in thickness were prepared: one at room temperature (RT) and the second at 200 °C. XRD, optical and electrical experiments indicated that the films are polycrystalline having average crystallite sizes from 30 to 80 nm, integrated transmittances in the range of 400-1000 nm increased from 85 to 90 per cent and optical band-gap values increased from 3 to 3.2 eV with higher deposition temperature. The resistivity of the obliquely sputtered samples positioned at 80° to the substrate holder was one order lower than the horizontally positioned samples. No significant changes were observed in case of optical properties of the films in dependence on the tilt-angle.