Bolometric Effect in Bi2O2Se Photodetectors

Bi₂O₂Se is emerging as a photosensitive functional material for optoelectronics, and its photodetection mechanism is mostly considered to be a photoconductive regime in previous reports. Here, the bolometric effect is discovered in Bi₂O₂Se photodetectors. The coexistence of photoconductive effect and bolometric effect is generally observed in multiwavelength photoresponse measurements and then confirmed with microscale local heating experiments. The unique photoresponse of Bi₂O₂Se photodetectors may arise from a change of hot electrons during temperature rises instead of photoexcited holes and electrons. Direct proof of the bolometric effect is achieved by real‐time temperature tracking of Bi₂O₂Se photodetectors under time evolution after light excitation. Moreover, the Bi₂O₂Se bolometer shows a high temperature coefficient of resistance (?1.6% K^?1), high bolometric coefficient (?31 nA K^?1), and high bolometric responsivity (>320 A W^?1). These findings offer a new approach to develop bolometric photodetectors based on Bi₂O₂Se layered materials.