N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films |
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| Authors: | Kin Kiong Lee Ishida Y. Ohshima T. Kojima K. Tanaka Y. Takahashi T. Okumura H. Arai K. Kamiya T. |
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| Affiliation: | Japan Atomic Energy Res. Inst., Gunma, Japan; |
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| Abstract: | We present results of the enhancement mode, n-channel 3C-silicon carbide (SiC) MOSFETs fabricated on homoepitaxy 3C-SiC films. The fabricated devices exhibit excellent gate-controlled linear and saturation regimes of operation. The average effective channel mobility is found to be 229 cm/sup 2//Vs. The breakdown field of the gate oxide is observed at be 11 MV/cm and the subthreshold swing is determined to be 280 mV/decade. |
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