| HPT型Ge量子点红外探测器 |
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| 引用本文： | 魏榕山,何明华.HPT型Ge量子点红外探测器[J].红外与激光工程,2011,40(5):791-794. |
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| 作者姓名： | 魏榕山 何明华 |
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| 作者单位： | 福州大学物理与信息工程学院,福建福州,350108 |
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| 基金项目： | 福建省自然科学基金，福建省教育厅科研资助项目，福州大学科技发展基金 |
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| 摘 要： | 异质结光敏晶体管(HPT)是一种具有内部电流增益的光电探测器,且与异质结双极晶体管(HBT)的制作工艺完全兼容.利用超高真空化学气相淀积(UHV/CVD)方法在HBT晶体管的基区和集电区间加入多层Ge量子点材料作为光吸收区.TEM和DCXRD测试结果表明,生长的多层Ge量子点材料具有良好的晶体质量.为了提高HPT的发射...
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| 关 键 词： | 异质结光敏晶体管 Ge量子点 多晶硅发射极 超高真空化学气相淀积 |
HPT-type Ge quantum dot photodetector |
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| Wei Rongshan,He Minghua.HPT-type Ge quantum dot photodetector[J].Infrared and Laser Engineering,2011,40(5):791-794. |
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| Authors: | Wei Rongshan He Minghua |
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| Affiliation: | Wei Rongshan,He Minghua(College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China) |
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| Abstract: | Heterojunction phototransistor(HPT) can produce high current gain and its fabrication process is compatible with that of heterojunction bipolar transistor(HBT).In this paper,a HPT-type Ge quantum dot photodetector with Ge-dot multilayers incorporated in the base-collector junction was grown by UHV/ CVD.TEM and DCXRD measurement showed good crystal quality of the material.Then a two-terminal HPT-type Ge quantum dot photodetector was fabricated to improve its emitter efficiency with a heavily doped polysilico... |
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| Keywords: | HPT Ge quantum dot polysilicon emitter UHV/CVD |
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