A model for PolySilicon MOSFET's

A model is developed to describe the high value of threshold voltage and the low value of channel mobility observed in n-channel polysilicon (poly-Si) MOSFET's. The model takes into account charge-coupling between the gate and grain boundary traps. The charge-coupling appears as an image charge in Poisson's equation and the charge neutrality equation. Finally, a drift-diffusion mode of conduction is used to describe the channel conductance beyond the strong inversion threshold.