Dislocations in strained layers: The Ge-Si system

The Ge-Si on Si epilayer system, besides being an interesting technological system in its own right, is a superb model for strained-layer studies. The point defect and symmetry defect structures associated with compound semiconductors can be avoided, allowing a focus on the mechanics of the system. Dislocation sources, glide behavior, and performance effects have been examined for strained-layer systems. Surprises have appeared along the way, but these materials are now becoming characterized well enough for industrial device applications.