| 一种带有超结浮空层的槽栅场阻IGBT |
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| 引用本文： | 叶俊,傅达平,罗波,赵远远,乔明,张波. 一种带有超结浮空层的槽栅场阻IGBT[J]. 半导体学报, 2010, 31(11): 114008-5 |
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| 作者姓名： | 叶俊 傅达平 罗波 赵远远 乔明 张波 |
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| 基金项目： | Project supported by National Natural Science Foundation of China (Grant No.60906038) and the Science-Technology Foundation for Young Scientist of University of Electronic Science and Technology of China(Grant No.L08010301JX0830) |
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| 摘 要： | 本文提出了一种带有超结浮空层的槽栅场阻IGBT，它具有高的击穿电压(>1200V)，低的正向压降和快速的关断能力。高掺杂的 SJ 浮空层在阳极侧引入了电场峰的同时优化了器件内载流子分布，带来关态击穿电压提高，开态、开关态能量损耗减少等好处。在保持电荷平衡的前提下，增加 SJ 浮空层的厚度可以提高击穿电压和降低正向压降，降低 P 型阳极浓度可以减少关断损耗。与传统结构相比，新结构击穿电压提高了100V，正向压降降低了0.33V（电流密度为100A/cm2），关断时间缩短了60%。
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| 关 键 词： | IGBT TFS 浮层 交界处 阻断电压 掺杂浓度 击穿电压 关断损耗 |
| 收稿时间： | 2010-05-20 |
| 修稿时间： | 2010-05-20 |
A novel TFS-IGBT with a super junction floating layer |
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| Ye Jun,Fu Daping,Luo Bo,Zhao Yuanyuan,Qiao Ming and Zhang Bo. A novel TFS-IGBT with a super junction floating layer[J]. Chinese Journal of Semiconductors, 2010, 31(11): 114008-5 |
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| Authors: | Ye Jun Fu Daping Luo Bo Zhao Yuanyuan Qiao Ming Zhang Bo |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A novel trench field stop (TFS) IGBT with a super junction (SJ) floating layer (SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage (> 1200 V), low on-state voltage drop and fast turn-off capability. A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution, which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state/switching state for the SJ TFS-IGBT. A low on-state voltage (VF) and a high breakdown voltage (BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance. A low turn-off loss can be achieved by decreasing the concentration of the P-anode. Simulation results show that the BV is enhanced by 100 V, VF is decreased by 0.33 V (at 100 A/cm2) and the turn-off time is shortened by 60%, compared with conventional TFS-IGBTs. |
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| Keywords: | IGBT Super Junction (SJ) on-state voltage breakdown voltage energy loss charge balance |
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