Si(111)衬底上多层石墨烯薄膜的外延生长

利用固源分子束外延(SSMBE)技术, 在Si(111)衬底上沉积碳原子外延生长石墨烯薄膜, 通过反射式高能电子衍射(RHEED)、红外吸收谱(FTIR)、拉曼光谱(RAMAN)和X射线吸收精细结构谱(NEXAFS)等手段对不同衬底温度(400、600、700、800℃)生长的薄膜进行结构表征. RAMAN和NEXAFS结果表明: 在800℃下制备的薄膜具有石墨烯的特征, 而 400、600和700℃生长的样品为非晶或多晶碳薄膜. RHEED和FTIR结果表明, 沉积温度在600℃以下时C原子和衬底Si原子没有成键, 而衬底温度提升到700℃以上, 沉积的C原子会先和衬底Si原子反应形成SiC缓冲层, 且在800℃沉积时缓冲层质量较好. 因此在Si衬底上制备石墨烯薄膜需要较高的衬底温度和高质量的SiC缓冲层.

Epitaxial Growth of Multi-layer Graphene on the Substrate of Si(111)

Graphene thin films were epitaxial grown on Si(111) substrates by depositing carbon atoms with solid source molecular beam epitaxy (SSMBE). The structural properties of the samples deposited at different substrate temperature (400, 600, 700 and 800℃) were investigated by reflection high energy electron diffraction (RHEED), Fourier transform infrared spectroscope (FTIR), Raman spectroscope (RAMAN) and near-edge X-ray absorption fine-structure (NEXAFS). RAMAN and NEXAFS results indicated that the thin film deposited at 800℃ exhibited the characteristic of graphene, while the thin films deposited at 400℃, 600℃ and 700℃ were attributed to amorphous or polycrystalline carbon thin films. RHEED and FTIR results indicated that C atoms did not bond with Si atoms at the substrate temperature below 600℃, however, above 700℃, C atoms reacted with Si atoms and formed the SiC buffer layer. Furthermore, the better quality of SiC buffer layer could be obtained at 800℃. Thus, high substrate temperature and high-quality SiC buffer layers are essential to the formation of the graphene layers on the Si substrates.