| ZnO/Zn2SnO4纳米电缆结构表征与发光特性 |
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| 引用本文： | 周茹莉,孔向阳.ZnO/Zn2SnO4纳米电缆结构表征与发光特性[J].无机材料学报,2011(6):597-601. |
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| 作者姓名： | 周茹莉 孔向阳 |
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| 作者单位： | 上海交通大学材料科学与工程学院汽车动力电池材料研究所; |
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| 基金项目： | 上海市基础研究重点项目(08JC1411000); 973项目(2010CB-9333702)~~ |
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| 摘 要： | ZnO、Zn2SnO4均为直接带隙宽禁带氧化物半导体,是优异的功能材料.以ZnO、SnO2为原料,通过共热蒸发法,合成了ZnO/Zn2SnO4纳米电缆结构.该纳米电缆结构为以ZnO为芯,Zn2SnO4为鞘,直径为50~100nm,长度可达上百微米.通过TEM分析手段,发现该纳米电缆结构中,ZnO的生长方向为<0001>方向,ZnO芯与Zn2SnO4鞘之间形成晶格外延关系.室温下光致发光谱结果显示,该纳米电缆结构在紫外区域(380.58nm附近处)存在很强的带边发光,而在可见光区域没有明显的发光带,这一结果表明:Zn2SnO4鞘层的存在能有效抑制ZnO表面的缺陷发光.ZnO/Zn2SnO4纳米电缆结构可以抑制电子-空穴的复合,在染料敏化太阳能电池等方面有一定的应用潜力.
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| 关 键 词： | ZnO/Zn2SnO4 纳米电缆 合成 发光特性 |
Photoluminescence and Characterization of ZnO/Zn_2SnO_4 Nanocables |
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| ZHOU Ru-Li,KONG Xiang-Yang.Photoluminescence and Characterization of ZnO/Zn_2SnO_4 Nanocables[J].Journal of Inorganic Materials,2011(6):597-601. |
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| Authors: | ZHOU Ru-Li KONG Xiang-Yang |
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| Affiliation: | ZHOU Ru-Li,KONG Xiang-Yang(Center of Nanotechology for Energy Conversion and Storage,School of Materials Science and Engineering,Shanghai Jiao Tong University,Shanghai 200240,China) |
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| Abstract: | ZnO and Zn2SnO4 are excellent functional semiconducting materials with wide direct band gap,high electron mobility and photocatalytic activity.High-density single-crystalline ZnO/Zn2SnO4 nanocables were successfully synthesized by using a simple thermal co-evaporation from a mixture source of ZnO and SnO2 powders.The products in general contain various geometries of wires,with an average diameter of 50-100 nm.These nanowires are consisted of ZnO core and Zn2SnO4 sheath with ultra-length,up to several hundre... |
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| Keywords: | ZnO/Zn2SnO4 nanocable synthesis photoluminescence spectra |
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